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| Ordering number : ENA0414 SB0503EC www..com SANYO Semiconductors DATA SHEET SB0503EC Applications * Low IR Schottky Barrier Diode 30V, 0.5A Rectifier High frequency rectification (switching regulators, converters, choppers). Features * * * Low switching noise. Low leakage current and high reliability due to planar structure. Ultraminiature (1008 size) and thin (0.6mm) leadless package. Specifications Absolute Maximum Ratings at Ta=25C Parameter Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRRM VRSM IO IFSM Tj Tstg 50Hz sine wave, 1 cycle Conditions Ratings 30 35 0.5 5 --55 to +150 --55 to +150 Unit V V A A C C Electrical Characteristics at Ta=25C Parameter Reverse Voltage Forward Voltage Reverse Current Interterminal Capacitance Reverse Recovery Time Thermal Resistance Symbol VR VF IR C trr Rth(j-a) IR=0.2mA IF=0.5A VR=15V VR=10V, f=1MHz IF=IR=100mA, See specified Test Circuit. Mounted in Cu-foiled area of 0.72mm20.03mm on glass epoxy board 200 Conditions Ratings min 30 0.65 1.5 6 10 typ max Unit V V A pF ns C / W Marking : DA Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before using any SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN N2906SB TI IM TC-00000343 No. A0414-1/3 SB0503EC Package Dimensions unit : mm (typ) 7035-002 Cathode Mark (On the top) Top View 0.8 Polarity Discriminating Mark Electrical Connection www..com 2 Anode Cathode 1.0 *Electorodes : on the bottom Top view Cathode Mark (Top) 1 0.6 Anode Cathode 0.7 0.3 1 0.6 2 1 : Anode 2 : Cathode SANYO : ECSP1008-2 Bottom View trr Test Circuit Duty10% 10mA 50 10s 100 10 --5V trr 10mA 1mA 2 1.0 7 5 IF -- VF 1000 IR -- VR Ta=150C 125C 100 C 5 0 C 3 2 0.1 7 5 3 2 0.01 7 5 3 2 Reverse Current, IR -- A Forward Current, IF -- A 100C 75C 10 75 Ta= 1 150 C 25C 100 C 1.0 50C 25C 2 0C 5C 0.1 0C 0.01 0.001 0 --25C 0.001 0.5 0.6 0.7 0.8 0.9 0 5 10 15 20 25 30 35 IT11083 IT11082 0.1 0.2 0.3 0.4 Forward Voltage, VF -- V Reverse Voltage, VR -- V No. A0414-2/3 SB0503EC Average Forward Power Dissipation, PF(AV) -- W 0.50 0.45 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0 0 0.1 0.2 180 360 Rectangular wave 360 Average Reverse Power Dissipation, PR(AV) -- W PF(AV) -- IO (1) (2) (4) (3) 1.4E--05 PR(AV) --www..com VRM (1)Rectangular wave =300 (2)Rectangular wave =240 (3)Rectangular wave =180 (4)Sine wave =180 Rectangular wave VR 360 1.2E--05 (1) (2) 1.0E--05 Sine wave 8.0E--06 (3) 6.0E--06 Sine wave VR 180 360 4.0E--06 (1)Rectangular wave =60 (2)Rectangular wave =120 (3)Rectangular wave =180 (4)Sine wave =180 0.3 0.4 0.5 0.6 IT10239 (4) 2.0E--06 0.0E+00 0 5 10 15 20 25 30 35 IT10240 Average Output Current, IO -- A 180 160 Peak Reverse Voltage, VRM -- V 100 7 Tc -- IO C -- VR Interterminal Capacitance, C -- pF (3) 0.6 IT11697 Case Temperature, Tc -- C 140 120 100 80 60 40 20 0 (1)Rectangular wave =60 (2)Rectangular wave =120 (3)Rectangular wave =180 (4)Sine wave =180 5 3 2 Rectangular wave 360 10 7 5 3 2 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 Sine wave 180 360 (1) 0.2 0.3 0.4 (2) (4) 0.5 0 0.1 Average Output Current, IO -- A Reverse Voltage, VR -- V IT10242 Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of November, 2006. Specifications and information herein are subject to change without notice. PS No. A0414-3/3 |
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